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this is information on a product in full production. october 2013 docid023448 rev 5 1/21 STD7N80K5, stp7n80k5, stu7n80k5 n-channel 800 v, 0.95 typ., 6 a zener-protected supermesh? 5 power mosfets in dpak, to-220 and ipak packages datasheet - production data figure 1. internal schematic diagram features ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these n-channel zener-protected power mosfets are designed using st?s revolutionary avalanche-rugged very high voltage supermesh? 5 technology, based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. to-220 1 2 3 tab dpak 1 3 tab 2 3 2 1 tab ipak d(2, tab) g(1) s(3) am01476v1 order codes v ds r ds(on) max i d p tot STD7N80K5 800 v 1.2 6 a 110 w stp7n80k5 stu7n80k5 table 1. device summary order codes marking package packaging STD7N80K5 7n80k5 dpak tape and reel stp7n80k5 to-220 tube stu7n80k5 ipak www.st.com
contents STD7N80K5, stp7n80k5, stu7n80k5 2/21 docid023448 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid023448 rev 5 3/21 STD7N80K5, stp7n80k5, stu7n80k5 electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 6 a i d drain current (continuous) at t c = 100 c 3.8 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 24 a p tot total dissipation at t c = 25 c 110 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 2a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 88 mj dv/dt (2) 2. i sd 6 a, di/dt 100 a/s, v ds(peak) v (br)dss peak diode recovery voltage slope 4.5 v/ns t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit dpak to-220 ipak r thj-case thermal resistance junction-case max 1.14 c/w r thj-amb thermal resistance junction-amb max 62.5 100 c/w r thj-pcb (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board. thermal resistance junction-pcb max 50 c/w
electrical characteristics STD7N80K5, stp7n80k5, stu7n80k5 4/21 docid023448 rev 5 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v v ds = 800 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 3 a 0.95 1.2 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -360- pf c oss output capacitance - 30 - pf c rss reverse transfer capacitance -1-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 640 v -47-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -20-pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 6 - q g total gate charge v dd = 640 v, i d = 6 a v gs =10 v (see figure 17 ) - 13.4 - nc q gs gate-source charge - 3.7 - nc q gd gate-drain charge - 7.5 - nc
docid023448 rev 5 5/21 STD7N80K5, stp7n80k5, stu7n80k5 electrical characteristics 21 the built-in back-to-back zener diodes have been specifically designed to enhance not only the device's esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 3 a, r g =4.7 , v gs =10 v (see figure 19 ) -11.3- ns t r rise time 8.3 ns t d(off) turn-off delay time 23.7 ns t f fall time 20.2 ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 6 a i sdm source-drain current (pulsed) - 24 a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 6 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 6 a, v dd = 60 v di/dt = 100 a/s, (see figure 18 ) - 315 ns q rr reverse recovery charge - 2.8 c i rrm reverse recovery current - 17.5 a t rr reverse recovery time i sd = 6 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 18 ) - 480 ns q rr reverse recovery charge - 3.8 c i rrm reverse recovery current - 16 a table 8. gate-source zener diode symbol parameter test conditions min typ. max unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d =0 30 - - v
electrical characteristics STD7N80K5, stp7n80k5, stu7n80k5 6/21 docid023448 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ms 4j?# 4c?# 3inlge pulse ?s ms !-v figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. output characteristics figure 7. transfer characteristics ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ms 4j?# 4c?# 3inlge pulse ?s ms !-v ) $ 6 $3 6 ! 6 6 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v
docid023448 rev 5 7/21 STD7N80K5, stp7n80k5, stu7n80k5 electrical characteristics 21 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. source-drain diode forward characteristics figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature 6 '3 1 g n# 6 6 $3 6 $3 6 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v # 6 $3 6 p& #iss #oss #rss !-v 6 3$ ) 3$ ! 6 4 * ?# 4 * ?# 4 * ?# !-v 6 '3th 4 * ?# norm ) $ ?! !-v 2 $3on 4 * ?# norm ) $ ! 6 '3 6 !-v
electrical characteristics STD7N80K5, stp7n80k5, stu7n80k5 8/21 docid023448 rev 5 figure 14. normalized v (br)dss vs temperature figure 15. maximum avalanche energy vs starting t j 6 "2 $33 4 * ?# norm ) $ m! !-v % !3 4 * ?# m* !-v
docid023448 rev 5 9/21 STD7N80K5, stp7n80k5, stu7n80k5 test circuits 21 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STD7N80K5, stp7n80k5, stu7n80k5 10/21 docid023448 rev 5 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid023448 rev 5 11/21 STD7N80K5, stp7n80k5, stu7n80k5 package mechanical data 21 table 9. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data STD7N80K5, stp7n80k5, stu7n80k5 12/21 docid023448 rev 5 figure 22. dpak (to-252) type a drawing 006 8 772_m_type_a
docid023448 rev 5 13/21 STD7N80K5, stp7n80k5, stu7n80k5 package mechanical data 21 figure 23. dpak (to-252) type a footprint (a) a. all dimensions are in millimeters footprint_rev_m_type_a
package mechanical data STD7N80K5, stp7n80k5, stu7n80k5 14/21 docid023448 rev 5 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid023448 rev 5 15/21 STD7N80K5, stp7n80k5, stu7n80k5 package mechanical data 21 figure 24. to-220 type a drawing ?type!?2ev?4
package mechanical data STD7N80K5, stp7n80k5, stu7n80k5 16/21 docid023448 rev 5 table 11. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
docid023448 rev 5 17/21 STD7N80K5, stp7n80k5, stu7n80k5 package mechanical data 21 figure 25. ipak (to-251) drawing 006 8 771_k
packaging mechanical data STD7N80K5, stp7n80k5, stu7n80k5 18/21 docid023448 rev 5 5 packaging mechanical data table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
docid023448 rev 5 19/21 STD7N80K5, stp7n80k5, stu7n80k5 packaging mechanical data 21 figure 26. tape figure 27. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STD7N80K5, stp7n80k5, stu7n80k5 20/21 docid023448 rev 5 6 revision history table 13. document revision history date revision changes 17-jul-2012 1 first release. 17-oct-2012 2 ? minor text changes in cover page ? modified: title and i d value in cover page 19-dec-2012 3 ? minor text changes ? added: ipak package ? updated: section 4: package mechanical data for ipak 18-mar-2013 4 ? modified: i ar value on ta bl e 2 ? updated: section 4: package mechanical data only for dpak package 09-oct-2013 5 ? the part number stf7n80k5 has been moved to a separate datasheet ? minor text changes
docid023448 rev 5 21/21 STD7N80K5, stp7n80k5, stu7n80k5 21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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